Part Number Hot Search : 
REF19 1051QA3 MC603M 103M1 36719908 AD851007 B0530W C74AC
Product Description
Full Text Search
 

To Download BCR8PM-12LG-A8 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 BCR8PM-12LG
Triac
Medium Power Use
REJ03G1508-0100 Rev.1.00 Feb 14, 2007
Features
* * * * IT (RMS) : 8 A VDRM : 600 V IFGTI, IRGTI, IRGT III : 30 mA Viso : 2000 V * The Product guaranteed maximum junction temperature 150C * Insulated Type * Planar Type * UL Recognized : Yellow Card No. E223904 File No.E80271
Outline
RENESAS Package code: PRSS0003AA-A (Package name: TO-220F )
2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal
3 1 1 23
Applications
Switching mode power supply, light dimmer, electronic flasher unit, Television, Stereo system, refrigerator, Washing machine, infrared kotatsu, and carper, solenoid driver, small motor control, copying machine, electric tool, electric heater control, and other general purpose control applications
Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Symbol VDRM VDSM Voltage class 12 600 720 Unit V V
Rev.1.00
Feb 14, 2007
page 1 of 7
BCR8PM-12LG
Parameter RMS on-state current Surge on-state current I2t for fusion Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction Temperature Storage temperature Mass Isolation voltage Notes: 1. Gate open. Symbol IT (RMS) ITSM I2 t PGM PG (AV) VGM IGM Tj Tstg -- Viso Ratings 8 80 26 5 0.5 10 2 -40 to +150 -40 to +150 2.0 2000 Unit A A A2s W W V A C C g V Conditions Commercial frequency, sine full wave 360conduction, Tc = 107C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current
Typical value Ta = 25C, AC 1 minute, T1 * T2 * G terminal to case
Electrical Characteristics
Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Symbol IDRM VTM VFGT VRGT VRGT IFGT IRGT IRGT VGD Rth (j-c) (dv/dt)c Min. -- -- -- -- -- -- -- -- 0.2/0.1 -- 10/1 Typ. -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 1.6 1.5 1.5 1.5 30 30 30 -- 4.3 -- Unit mA V V V V mA mA mA V C/W V/s Test conditions Tj = 150C, VDRM applied Tc = 25C, ITM = 12 A, instantaneous measurement Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Tj = 125C/150C, VD = 1/2 VDRM Junction to caseNote3 Tj = 125C/150C
Gate trigger curentNote2
Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note4 commutation voltage
Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (j-c) in case of greasing is 0.5C/W. 4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below. Test conditions 1. Junction temperature Tj = 125C/150C 2. Rate of decay of on-state commutating current (di/dt)c = -4.0 A/ms 3. Peak off-state voltage VD = 400 V Commutating voltage and current waveforms (inductive load)
Supply Voltage
Time (di/dt)c Time Time VD
Main Current Main Voltage (dv/dt)c
Rev.1.00
Feb 14, 2007
page 2 of 7
BCR8PM-12LG
Performance Curves
Maximum On-State Characteristics
10 7 5
2
Rated Surge On-State Current
100
Surge On-State Current (A)
90 80 70 60 50 40 30 20 10 00 10 23 5 7 10
1
On-State Current (A)
3 2 10 7 5 3 2
1
Tj = 150C
Tj = 25C
100 7 5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
23
5 7 10
2
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current (Tj = tC) x 100 (%) Gate Trigger Current (Tj = 25C)
Gate Characteristics (I, II and III)
3 2 VGM = 10V
Gate Trigger Current vs. Junction Temperature
103 7 5 3 2 102 7 5 3 2 101 -60 -40-20 0 20 40 60 80 100 120 140 160
IRGT III Typical Example
PG(AV) = 0.5W PGM = 5W IGM = 2A
Gate Voltage (V)
101 7 5 3 2 100 7 5 3 2 10
-1
VGT = 1.5V
IRGT I, IFGT I
7 IFGT I IRGT I, IRGT III VGD = 0.1V 5 1 2 3 10 2 3 5 710 2 3 5 710 2 3 5 7104
Gate Current (mA)
Junction Temperature (C)
Gate Trigger Voltage (Tj = tC) x 100 (%) Gate Trigger Voltage (Tj = 25C)
Gate Trigger Voltage vs. Junction Temperature
103 7 5 3 2 10 7 5 3 2 101 -60 -40-20 0 20 40 60 80 100 120 140 160
2
Maximum Transient Thermal Impedance Characteristics (Junction to case)
Typical Example
Transient Thermal Impedance (C/W)
102 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 10-1
103
104
100
101
102
Junction Temperature (C)
Conduction Time (Cycles at 60Hz)
Rev.1.00
Feb 14, 2007
page 3 of 7
BCR8PM-12LG
Maximum Transient Thermal Impedance Characteristics (Junction to ambient)
Maximum On-State Power Dissipation
16
Transient Thermal Impedance (C/W)
10 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10-1 1
3
On-State Power Dissipation (W)
No Fins
14 12 360 Conduction
Resistive,
10 inductive loads 8 6 4 2 0 2 4 6 8 10 12 14 16
10 2 3 5 710 2 3 5 710 2 3 5 710 2 3 5 710
2
3
4
5
Conduction Time (Cycles at 60Hz)
RMS On-State Current (A)
Allowable Case Temperature vs. RMS On-State Current
160 140 160
Curves apply regardless of conduction angle
Allowable Ambient Temperature vs. RMS On-State Current
All fins are black painted aluminum and greased
120 120 t2.3 100 100 t2.3 60 60 t2.3
Ambient Temperature (C)
140 120 100 80 60 40 20 0 0 2
Case Temperature (C)
120 100 80 60 40
360 Conduction 20 Resistive, inductive loads
Curves apply regardless of conduction angle Resistive, inductive loads Natural convection
0
0
2
4
6
8
10 12 14 16
4
6
8
10 12 14 16
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj = tC) x 100 (%) Repetitive Peak Off-State Current (Tj = 25C)
Allowable Ambient Temperature vs. RMS On-State Current
160
Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads
Repetitive Peak Off-State Current vs. Junction Temperature
103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 -1 10
Typical Example
Ambient Temperature (C)
140 120 100 80 60 40 20 0 0 0.5 1.0
1.5
2.0
2.5
3.0
-60 -40-20 0 20 40 60 80 100 120 140 160
RMS On-State Current (A)
Junction Temperature (C)
Rev.1.00
Feb 14, 2007
page 4 of 7
BCR8PM-12LG
Holding Current vs. Junction Temperature
Holding Current (Tj = tC) x 100 (%) Holding Current (Tj = 25C)
103
7 5 4 3 2
Latching Current vs. Junction Temperature
10 7 5 3 2 102 7 5 3 2
1 3
Typical Example
102
7 5 4 3 2
Latching Current (mA)
Distribution
T2+, G- Typical Example
101 -60 -40 -20 0 20 40 60 80 100 120140 160
10 7 5 3 T +, G+ 2 2- - Typical Example T2 , G 100 -40 0 40 80
120
160
Junction Temperature (C)
Junction Temperature (C)
Breakover Voltage (dv/dt = xV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s)
Breakover Voltage vs. Junction Temperature
Breakover Voltage (Tj = tC) x 100 (%) Breakover Voltage (Tj = 25C)
160 140 120 100 80 60 40 20 0 -60 -40-20 0 20 40 60 80 100 120 140 160
Typical Example
Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj = 125C)
160 140 120 100 80 60 40 20
I Quadrant III Quadrant Typical Example Tj = 125C
01 2 3 4 10 2 3 5 710 2 3 5 710 2 3 5 710
Junction Temperature (C)
Rate of Rise of Off-State Voltage (V/s)
Breakover Voltage (dv/dt = xV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s)
Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj = 150C)
160 140 120 100 80 60 40 20
I Quadrant III Quadrant
Commutation Characteristics (Tj = 125C)
Critical Rate of Rise of Off-State Commutating Voltage (V/s)
7 5 3 2
Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT Time
Typical Example Tj = 150C
101 7 5 Minimum Characteristics 3 2
0
Typical Example Tj = 125C IT = 4A = 500s VD = 200V f = 3Hz
Value
I Quadrant
III Quadrant
01 10 2 3 5 7102 2 3 5 7103 2 3 5 7104
10 70 10
23
5 7 101
23
5 7 102
Rate of Rise of Off-State Voltage (V/s)
Rate of Decay of On-State Commutating Current (A/ms)
Rev.1.00
Feb 14, 2007
page 5 of 7
BCR8PM-12LG
Gate Trigger Current vs. Gate Current Pulse Width
Gate Trigger Current (tw) x 100 (%) Gate Trigger Current (DC)
103 7 5 3 2 102 7 5 3 2 101 0 10 23 5 7 10
1
Commutation Characteristics (Tj = 150C)
Critical Rate of Rise of Off-State Commutating Voltage (V/s)
7 5 3 2 101 7 5 3 2 100 70 10
Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT Time
Typical Example Tj = 150C IT = 4A = 500s VD = 200V f = 3Hz
Typical Example IFGT I IRGT I IRGT III
III Quadrant I Quadrant
Minimum Characteristics Value
23
5 7 10
1
23
5 7 10
2
23
5 7 10
2
Rate of Decay of On-State Commutating Current (A/ms)
Gate Current Pulse Width (s)
Gate Trigger Characteristics Test Circuits
6 6
Recommended Circuit Values Around The Triac
Load C1
6V V
A 330
6V V
A 330
R1
C0
R0 C0 = 0.1F R0 = 100
Test Procedure I 6
Test Procedure II
C1 = 0.1 to 0.47F R1 = 47 to 100
6V V
A 330
Test Procedure III
Rev.1.00
Feb 14, 2007
page 6 of 7
BCR8PM-12LG
Package Dimensions
Package Name TO-220F JEITA Package Code SC-67 RENESAS Code PRSS0003AA-A Previous Code MASS[Typ.] 2.0g
Unit: mm
10.5Max 5.2 2.8
5.0
1.2 17
3.2 0.2
13.5Min
3.6
1.3Max
0.8
2.54
2.54
8.5
0.5
2.6
Order Code
Lead form Standard packing Quantity Standard order code Standard order code example BCR8PM-12LG BCR8PM-12LG-A8
Straight type Vinyl sack 100 Type name Lead form Plastic Magazine (Tube) 50 Type name - Lead forming code Note : Please confirm the specification about the shipping in detail.
Rev.1.00
Feb 14, 2007
page 7 of 7
4.5
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document, please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com ) 5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a result of errors or omissions in the information included in this document. 6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products. 7. With the exception of products specified by Renesas as suitable for automobile applications, Renesas products are not designed, manufactured or tested for applications or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Renesas sales office beforehand. Renesas shall have no liability for damages arising out of the uses set forth above. 8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below: (1) artificial life support devices or systems (2) surgical implantations (3) healthcare intervention (e.g., excision, administration of medication, etc.) (4) any other purposes that pose a direct threat to human life Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all damages arising out of such applications. 9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages arising out of the use of Renesas products beyond such specified ranges. 10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products. Renesas shall have no liability for damages arising out of such detachment. 12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas. 13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have any other inquiries.
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145
http://www.renesas.com
Renesas Technology Malaysia Sdn. Bhd Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510
(c) 2007. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .7.0


▲Up To Search▲   

 
Price & Availability of BCR8PM-12LG-A8

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X